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nature electronics, 23 December 2021

nature electronics, 23 December 2021

Posted on 2021/12/23

by sg_portfolio

Field-Effect Transistors
Hexagonal Boron Nitride Gate Insulator
High Frequency Operation
High Room-Temperature Hall Mobility
High Temperature Operation
High Voltage Operation
Hydrogen-Terminated Diamond
P-Channel Transistors
Surface Transfer Doping
Wide-Bandgap Semiconductors

Nature
nature electronics

Journal: nature electronics
Publisher: nature
Article Title: High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
Authors: Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi & Yamaguchi Takahide
Paper link: https://www.nature.com/articles/s41928-021-00689-4
Journal issue link: https://www.nature.com/natelectron/articles?type=article