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Advanced Electronic Materials, 3 June 2025, Volume 11, Issue 8

Advanced Electronic Materials, 3 June 2025, Volume 11, Issue 8

Posted on 2025/06/03

by sg_portfolio

Field-Effect Mobility
Germanium-Tin
GeSn
GeSn Thin-Film Transistors
High-Mobility Thin-Film Transistors
Low-Temperature Processing
Next-Generation Semiconductor Materials
P-Channel Transistors
Polycrystalline Thin Films
Solid-Phase Crystallization
Thin-Film Electronics

Advanced Electronic Materials
Wiley

Journal: Advanced Electronic Materials
Publisher: Wiley
Article Title: High-Mobility p-Channel Thin-Film Transistors Based on Polycrystalline GeSn (Adv. Electron. Mater. 8/2025)
Authors: Kenta Moto, Shintaro Maeda, Kota Igura, Linyu Huang, Atsuki Morimoto, Keisuke Yamamoto, Kaoru Toko
Paper link: https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202570025
Journal issue link: https://advanced.onlinelibrary.wiley.com/toc/2199160x/2025/11/8